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Product Description
Stanford Microdevices' SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity. Output power at 1dB compression for the SHF-0289 is +30dBm when biased for Class AB operation at 8V and 250mA. The +46 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. They are well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including cellular PCS, CDPD, wireless data, and pagers. Adequate heat sinking must be provided for this part to avoid exceeding the maximum junction temperature. Methods include the use of screws near the device, and filled vias beneath the part to the ground plane. Refer to "Mounting and Thermal Considerations" section on page 7 for more information. Maximum Available Gain vs Frequency Vds = 8V, Idq = 250mA
30 25 20
SHF-0289
DC-3 GHz, 1.0 Watt GaAs HFET
Preliminary Preliminary
Product Features * Patented GaAs Heterostructure FET
Technology
* +30dBm Output Power at 1dB Compression * +46dBm Output IP3 * High Drain Efficiency: Up to 40% at Class AB * 13 dB Gain at 900MHz (Application circuit) * 13 dB Gain at 1900MHz (Application circuit) Applications * Analog and Digital Wireless System * Cellular PCS, CDPD, Wireless Data, Pagers
GMax(dB)
15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Frequency (GHz) Electrical Specifications at Ta = 25o C
Symbol Parameters: Test Conditions
2
Units
Min.
Typ.
Max.
|S21|
Insertion Power Gain Vds = 8.0V, I dq= 250mA, ZS=ZL=50 Ohms Maximum Available Gain Vds = 8.0V, I dq= 250mA, ZS=ZS OPT, ZL=ZL OPT Output Third Order Intercept Point (Device is tuned for maximum power output) Saturated Drain Current Vds = 3.0V, Vgs= 0V Tranconductance: Vds = 3.0V, Vgs = 0V Pinch-Off Voltage: Vds = 2.0V, I d = 1.2mA Gate-to-Source Breakdown Voltage, Igs = 2.4mA Gate-to-Drain Breakdown Voltage, Igd = 2.4mA Thermal Resistance, junction-to-lead
f = 0.9 GHz f = 1.9 GHz f = 0.9 GHz f = 1.9 GHz f = 0.9 GHz f = 1.9 GHz
dB dB dB m dB m mA mS V V V
o
17.7 12.5 23 20 46 46 650 375 -2.7 -1.9 -22 -22 37 -1.0 -17 -17
Gmax TOIP I D ss Gm Vp V bgs V bgd Rth
C/W
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101241 Rev A
1
Preliminary Preliminary SHF-0289 DC-3GHz, 1 Watt GaAs HFET Absolute Maximum Ratings Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Operating Temperature RF Input Power Channel Temperature Storage Temperature Symbol V DS VGS TOP PIN TCH TSTG Absolute Maximum +12V -5V to 0V -45 C to +85 C 200 mW +175 C -65 to +175 C
Plot of ID vs. VDS for VGS= -2.2V to 0V
0.7 0.6 0.5 0.4
VGS = 0 V VGS = - 0.2 V
VGS = - 0.4 V VGS = - 0.6 V VGS = - 0.8 V
ID(amps)
0.3 0.2 0.1 0 0 1
VGS = - 1.0 V VGS = - 1.2 V
VGS = -1.4 V VGS = -1.6 V VGS = -1.8 V VGS = -2.0 V VGS = -2.2 V
2
3
4
5
6
7
8
VDS (Volts)
NOTE: I/V curves were taken using pulse sampling techniques. This results in low duty cycle currents through the device and therefore very low power levels. It is not recommended that these measurements be taken in d.c. mode, as excessive current could result in damage to the device.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101241 Rev A
2
Preliminary Preliminary SHF-0289 DC-3GHz, 1 Watt GaAs HFET
25 20
|S21| & |S12| vs. Frequency
S12
-25 -28
dB
S12 (dB)
S21 (dB)
15
S21
-31 -34 -37 -40 0 1 2 3 4 5
10 5 0
GHz
Frequency (GHz)
S11 & S22 vs. Frequency (.05 to 4.5 GHz)
Typical s-parameters at 25 C (Vds = 8V, Idq = 250mA)
Freq GHz |S11| S11 Ang S 21 d B |S21| S21 Ang S 12 d B |S12| S12 Ang |S22| S22 Ang
0.05 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 3.0 3.5 4.0 4.5
0.98 0.98 0.95 0.91 0.88 0.86 0.85 0.85 0.84 0.84 0.84 0.84 0.84 0.84 0.85 0.81 0.77 0.73
-27.9 -33.9 -58.0 -82.2 -104.2 -121.5 -135.4 -146.9 -156.8 -165.4 -173.1 179.9 173.8 167.6 154.3 144.5 134.6 124.8
23.2 22.9 21.8 20.5 19.1 17.7 16.5 15.3 14.3 13.3 12.5 11.6 10.8 9.8 8.2 6.3 4.0 0.9
14.4 14.0 12.3 10.6 9.0 7.7 6.7 5.8 5.2 4.6 4.2 3.8 3.5 3.1 2.6 2.1 1.6 1.1
162.5 158.5 142.8 127.1 112.6 100.6 90.3 81.3 72.9 65.2 57.9 50.8 44.2 37.8 22.9 9.3 -4.3 -17.9
-36.5 -35.6 -32.6 -30.4 -29.0 -28.2 -27.8 -27.6 -27.5 -27.5 -27.5 -27.6 -27.8 -28.2 -28.7 -29.7 -30.9 -32.2
0.02 0.02 0.02 0.03 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.03 0.03 0.02
72.4 69.0 55.0 41.0 28.4 18.4 10.2 3.0 -3.2 -8.8 -14.1 -18.7 -23.2 -27.2 -35.8 -43.7 -51.5 -59.4
0.20 0.20 0.23 0.25 0.27 0.28 0.30 0.31 0.32 0.33 0.34 0.35 0.36 0.40 0.43 0.50 0.56 0.62
-47.6 -52.3 -71.3 -90.2 -108.5 -121.5 -131.5 -139.6 -146.8 -153.2 -159.7 -165.6 -171.7 -176.2 174.6 164.2 153.9 143.5
No external matching, scattering parameters de-embedded on test fixture to device lead at package edge.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
EDS-101241 Rev A
3
Preliminary Preliminary SHF-0289 DC-3GHz, 1 Watt GaAs HFET 900 MHz Application Circuit at 25 C (Vds=8V, Idq=250mA)
Ref. desig. Cd1,7 Value 220 pF Part N umber /Style RO HM MCH18 series RO HM MCH18 series RO HM MCH18 series RO HM MCH18 series TAN TALUM, size"A", 35 volt RO HM MCH18 series RO HM MCH18 series TO K O LL1608- FH5N 6K TO K O LL1608- FH4N 7K TO K O LL1608- FH39N T TO K O LL1608- FH82N T size 0603
Microstrip Segment Specifications
Ref. desig. Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Value 50 ohms, 6.0 deg. @ 900 MHz 50 ohms, 2.7 deg. @ 900 MHz 50 ohms, 8.5 deg. @ 900 MHz 50 ohms, 3.8 deg. @ 900 MHz 50 ohms, 3.4 deg. @ 900 MHz 50 ohms, 2.2 deg. @ 900 MHz 50 ohms, 6.0 deg. @ 900 MHz 50 ohms, 2.7 deg. @ 900 MHz
Cd2,6,8,12 18 pF Cd3,10 C d4,9 Cd5,11 CM1 CM2 LM1 LM2 Lbias1 Lbias2 Rstab1,2 10 0 0 p F 100 pF 0.1 uF 3.3 pF 3.9 pF 5.6 nH 4.7 nH 39 nH 82 nH 20 ohms
Phase shift functional block between compo-
nents are calculated based on wavelength of 900 MHz signal on FR4 board material with dielectric constant of 4.1, microstrip width and height dimensions of W=.054 inch and h= .031 inch.
Test Data @ 0.9 GHz
P1dB(dBm) IP3(dBm) 30.5 46.0 Output tone Level (dBm) 15
40
Pout (dBm)
Pout vs. Pin
T=25C
Efficiency (%)
60 40 20 0
Drain Efficiency & ID vs. Pout
T=25C
510 430 350 270
ID (mA) S12 (dB)
30 20 10 0 5
Pin (dBm)
D r a in E ffic ie n c y ID
10
15
20
15
20
25
Pout (dBm)
30
35
0 -5 -1 0 -1 5 -2 0 -2 5 -3 0
S11 & S22 vs. Frequency
S22 S11
T=25C
18 15
S21 (dB)
S21& S12vs. Frequency
S21
T=25C
-2 6 -2 9 -3 2 -3 5 -3 8
S11, S22 (dB)
12 9 6 0 .7 0 .8
S12
0 .7
0 .8
0 .9
1 .0
1 .1
0 .9
1 .0
1 .1
Frequency GHz
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC
Frequency GHz
http://www.stanfordmicro.com
EDS-101241 Rev A
Note: s-parameters determined using applications circuit shown above
4
Preliminary Preliminary SHF-0289 DC-3GHz, 1 Watt GaAs HFET 1.9 GHz Application Circuit at 25 C (Vds=8V, Idq=250mA)
Microstrip Segment Specifications
Ref. desig. C d1 C d2,3,6,7,8 C d9 C d4 Cd10 C d5 CM1 CM2 Lbias1 Lbias2 Rstab1 Rstab2 Value 220 pF 33 pF 1000 pF 100 pF 0.1 uF 10 uF 2.7 pF 2.2 pF 10 nH 22 nH Part Number /Style ROHM MCH18 series ROHM MCH18 series ROHM MCH18 series ROHM MCH18 series TANTALUM, size"A", 35 volt TANTALUM, size"A", 35 volt ROHM MCH18 series ROHM MCH18 series TOKO LL1608- FH10NT TOKO LL1608- FH22NT
Ref. desig. Value Z1 Z2 Z3 Z4 Z5 50 ohms, 5.5 deg. @ 1900 MHz 50 ohms, 17.9 deg. @ 1900 MHz 50 ohms, 5.5 deg. @ 1900 MHz 50 ohms, 27 deg. @ 1900 MHz 50 ohms, 5.8 deg. @ 1900 MHz
Phase shift functional block between components
are calculated based on wavelength of 1900 MHz signal on FR4 board material with dielectric constant of 4.1, microstrip width and height dimensions of W=.054 inch and h= .031 inch.
5.1 ohms size 0603 20 ohms size 0603
Test Data @ 1.9 GHz
P1dB(dBm) IP3(dBm) 30.5 46.0 Output tone Level (dBm) 15
40
Pout (dBm)
Pout vs. Pin
T=25C
60
Efficiency (%)
Drain Efficiency & IDvs. Pout
T=25C
510
ID (mA) S12 (dB)
30 20 10 0 5 10
Pin (dBm)
40 20 0
D r a in E f fic ie n c y ID
430 350 270 30
T=25oC
15
T=25oC
S22
20
15
20
25
Pout(dBm)
35
0 -5 -1 0 -1 5 -2 0 -2 5 -3 0
S11 & S22 vs. Frequency
18 15
S21 (dB)
S21 & S12 vs. Frequency
S21 S12
-2 6 -2 9 -3 2 -3 5 -3 8
S11, S22 (dB)
S11
12 9 6 1 .5 1 .7
1 .5
1 .7
Frequency GHz
1 .9
2 .1
2 .3
Frequency GHz
1 .9
2 .1
2 .3
Note: s-parameters determined using applications circuit shown above
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
EDS-101241 Rev A
5
Preliminary Preliminary SHF-0289 DC-3GHz, 1 Watt GaAs HFET C (Vds=8V, Idq=250mA) 2.45 GHz Application Circuit at 25
Microstrip Segment Specifications
Ref. desig. C d2,5 Cd1,3,6,7,8 C d9 C d4 C d 10 CM1 CM2 Lbias1 Lbias2 Rstab1 Rstab2 Value 5.6 pF 22 pF Part Number /Style ROHM MCH18 series ROHM MCH18 series
Ref. desig. Z1 Z2 Z3 Z4 Z5 Z6 Z7 Value 50 ohms, 7.3 deg. @ 2450 MHz 50 ohms, 12.7 deg. @ 2450 MHz 50 ohms, 10.3 deg. @ 2450 MHz 50 ohms, 10.3 deg. @ 2450 MHz 50 ohms, 15.8 deg. @ 2450 MHz 50 ohms, 18.9 deg. @ 2450 MHz 50 ohms, 7.1 deg. @ 2450 MHz
1000 pF ROHM MCH18 series 100 pF 0.1 uF 1. 5 p F 1.2 pF 15 nH 15 nH ROHM MCH18 series TANTALUM, size"A", 35 volt ROHM MCH18 series ROHM MCH18 series TOKO LL1608- FH15NT TOKO LL1608- FH15NT
Phase shift functional block between components are
5.1 ohms size 0603 10 ohms size 0603
calculated based on wavelength of 2450 MHz signal on FR4 board material with dielectric constant of 4.1, microstrip width and height dimensions of W=.054 inch and h= .031 inch.
Test Data @ 2.45 GHz
P1dB(dBm) IP3(dBm) Output tone Level (dBm) 31.0 44.5 15
40
Pout (dBm)
Pout vs. Pin
T=25oC
60
Efficiency (%)
Drain Efficiency & ID vs. Pout
T=25oC
510
D r a in E ffic ie n c y
30 20 10 0 5 10 15 20
T=25oC
40 20 0
430
ID
350 270
25
10
15
20
25
30
35
Pin (dBm)
Pout (dBm)
0 -5 -1 0 -1 5 -2 0 -2 5 -3 0
S11 & S22 vs. Frequency
S22
18 15
S21 (dB)
S11 & S22 vs. Frequency
T=25oC
-2 6
S12 (dB)
S11, S22 (dB)
-2 9
S12 S21
12 9 6 1 .9 5 2 .2 2 .4 5 2 .7
-3 2 -3 5 -3 8
S11
1 .9 5
2 .2
2 .4 5
2 .7
2 .9 5
2 .9 5
Frequency GHz
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC
Frequency GHz
http://www.stanfordmicro.com
EDS-101241 Rev A
Note: s-parameters determined using applications circuit shown above
6
ID (mA)
Preliminary Preliminary SHF-0289 DC-3GHz, 1 Watt GaAs HFET
Part Number Ordering Information Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed.
Part Number SHF-0289 Devices Per R eel 1000 Reel Siz e 7"
Mounting and Thermal Considerations:
It is very important that adequate heat sinking be provided to avoid exceeding the maximum device junction temperature. All of the following suggestions should be followed to ensure maximum operating life of the device: 1. Use 2 ounce copper if possible. 2. Use a large ground pad area with many plated throughholes (solder filling is recommended). 3. Multiple filled vias are required directly below the SOT89 ground tab. 4. Solder the copper pad on the backside of the device package to the ground plane. 5. Use three point board seating with 2-56 machine screws (no more than 0.2 inch from the device) to provide a low thermal resistance path to the plate. The thermal resistance from ground lead to screws is 2 deg. C/W 6. We recommend thermal transfer paste be used between the board and the mounting plate.
Part Symbolization The part will be symbolized with a "H2" designator on the top surface of the package.
Pin D esignation
1 2 3 4 Gate Source D rai n Source
Outline Drawing
1
H2
2 3
4
522 Almanor Ave., Sunnyvale, CA 94086
H2
Phone: (800) SMI-MMIC http://www.stanfordmicro.com
EDS-101241 Rev A
7
Preliminary Preliminary SHF-0289 DC-3GHz, 1 Watt GaAs HFET
Component Tape and Reel Packaging
Tape Dimensions For 89 Outline
D escription C avi ty Length Wi dth D epth Pi tch Bottom Hole D i ameter D i ameter Pi tch Posi ti on Wi dth T pe Thi ckness a Wi dth Thi ckness C avi ty to Perforati on (Wi dth D i recti on) C avi ty to Perforati on (Length D i recti on)
Symbol A B K P1 D1 D0 P0 E C t W T F P2
Siz e (mm)leel 4.91 +/- 0.01 4.52 +/- 0.01 1.90 +/- 0.01 8.00 +/- 0.01 1.60 +/- 0.10 1.55 +/- 0.05 4.00 +/- 0.01 1.75 +/- 0.01 9.10 +/- 0.25 0.05 +/- 0.01 12.0 +/- 0.03 0.30 +/- 0.05 5.50 +/- 0.10 2.00 +/- 0.10
Perforati on
C over T pe a C arri er T pe a D i stance
Note: Drawing not to scale
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101241 Rev A
8

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